A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.

A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of -8 dB.

设计了一种基于绝缘上层硅的硅-有机物材料混合马赫-曾德干涉型高速电光调制器.利用光束传播法对顶层硅为220 nm的绝缘上层硅基片上的3 dB分束器/合束器的结构参数进行模拟,优化后附加损耗仅为0.106 dB.为提高模式转换效率, 在条形波导和slot波导之间设计了模式转换器, 光耦合效率高达98.8%, 实现了光模式高效转化.利用时域有限差分法模拟了slot波导平板区掺杂浓度对波导内光学损耗的影响, 在几乎不产生光学损耗的情况下, 得到平板区轻掺杂浓度为71017/cm3, 调制器设计总损耗为0.493 dB.利用薄膜模式匹配法对slot波导结构进行仿真分析, 考虑slot区等效电容及平板区等效电阻对带宽的影响, 优化后得到slot波导结构的限制因子为0.199.采用slot波导与强非线性有机材料LXM1结合的绝缘上层硅平台实现了强普克尔效应, 得到电光调制器半波电压长度积为1.544 V·mm, 电学响应3 dB带宽为137 GHz.